bcp030t high efficiency heterojunction power fet chip (.25 m x 3 00 m) the berex bcp0 3 0 t is a gaas power phemt with a nominal 0. 2 5 micron gate length and 3 00 micron gate width making the product ideally suited for amplifier applications where high - gain and medium power from dc to 26 ghz. the product may be used in either wideband or narrow - band applications. the bcp0 3 0t is produced using state of the art metallization with si 3 n 4 passivation and is screened to assure reliability. product features ? 25 dbm typical output power ? 14 db typical gain @ 12 ghz ? 65% pae typical @12 ghz ? 0. 2 5 x 3 00 m recessed gate ? also available in 7 0 mil. ceramic package (bcp030t - 70) applications ? commercial ? military / hi - rel . ? test & measurement dc characteristics t a = 25 c symbol parameter/test conditions min. typical max. unit i dss saturated drain current (v gs = 0v, v ds = 1.0v) 6 0 90 120 ma g m transconductance (v ds = 2v, vgs = 50% i dss ) 12 0 ms v p pinch - off voltage (i ds = 0.3 ma, v ds = 2v) - 2 .5 - 1.1 - 0.5 v b v gd drain breakdown voltage (i g = 0.3 ma, source open) - 1 5 - 1 2 v bv gs source breakdown voltage (i g = 0. 3 ma, drain open) - 1 3 v r th thermal resistance (au - sn eutectic attach) 1 21 c/w electrical characteristic s ( tuned for power ) t a = 25 c symbol parameter/test conditions test freq . min . typical max. unit p 1db output power @ p 1db (v ds = 8 v, i ds = 50% i dss ) 12 gh z 18 ghz 24.5 25.5 25.5 dbm g 1db gain @ p 1db (v ds = 8 v, i ds = 50% i dss ) 12 gh z 18 ghz 13.0 14.0 10.5 db pae pae @ p 1db (v ds = 8 v, i ds = 50% i dss ) 12 gh z 18 ghz 6 5 60 % nf 50 ohm noise figure (v ds =2v, i ds =15 ma ) 12 ghz 1.14 db www.berex.com berex, inc. 3350 scot blvd. #61 - 01 santa clara, ca 95054 tel. (408) 452 - 5595 january 2015 specifications are subject to change without notice. ? berex 2015 rev. 1.7
bcp03 0t electrical characteristic s ( tuned for gain ) t a = 25 c symbol parameter/test conditions test freq . min . typical m ax. unit p 1db output power @ p 1db (v ds = 8 v, i ds = 50% i dss ) 12 gh z 18 ghz 22.0 23.0 23.0 dbm g 1db gain @ p 1db (v ds = 8 v, i ds = 50% i dss ) 12 gh z 18 ghz 1 4 .5 1 5 .5 11.5 db pae pae @ p 1db (v ds = 8 v, i ds = 50% i dss ) 12 gh z 18 ghz 45 45 % nf 50 ohm noise figure (v ds =2v, i ds =15 ma ) 12 ghz 1.14 db maximum rating s (t a = 25 c) symbols parameters absolute continuous v ds v gs i ds i gsf p in t ch t stg p t drain - source voltage gate - source voltage drain current forward gate current input power channel temperature storage temperature total power dissipation 12 v - 6 v i dss 18 ma 2 2 dbm 175 c - 60 c - 150 c 1 . 4 w 8 v - 3 v i dss 3 ma @ 3db compression 150 c - 60 c - 150 c 1.2 w exceeding any of the above maximum ratings will result in reduced mttf and may cause permanent damage to the device . p in _p out /gain, pae (1 2 gh z ) frequency = 12ghz v ds = 8 v, i ds = 50% i dss (tuned for power) frequency = 12ghz v ds = 8 v, i ds = 50% i dss (tune d for gain) www.berex.com berex, inc. 3350 scot blvd. #61 - 01 santa clara, ca 95054 tel. (408) 452 - 5595 january 2015 specifications are subject to change without notice. ? berex 2015 rev. 1.7
bcp03 0t p in _p out /gain, pae (18 gh z ) frequency = 18 ghz v ds = 8 v, i ds = 50% i dss (tuned for power) frequency = 18 ghz v ds = 8 v, i ds = 50% i dss (tune d for gain) s - parameter ( v ds = 8v, i ds = 50% i dss ) freq . [g hz] s11 [ mag ] s11 [ang . ] s21 [ mag ] s21 [ang . ] s12 [ mag ] s12 [ang . ] s22 [ mag ] s22 [ang . ] 1 0.97 - 27.72 9.10 159.71 0.019 74.59 0.71 - 10.54 2 0.91 - 53.85 8.41 141.85 0.036 61.30 0.66 - 19.37 3 0.85 - 78.65 7.57 126.23 0.048 50.31 0.59 - 26.23 4 0.79 - 100.97 6.73 112.12 0.055 41.94 0.54 - 32.00 5 0.75 - 121.90 5.95 99.32 0.061 35.64 0.48 - 37.41 6 0.73 - 139.47 5.24 88.30 0.062 30.97 0.44 - 41.98 7 0.72 - 155.99 4.62 77.67 0.062 24.97 0.40 - 48.43 8 0.72 - 168.99 4.14 68.95 0.063 21.67 0.38 - 51.15 9 0.72 - 179.97 3.71 61.22 0.060 19.65 0.36 - 54.78 10 0.72 169.20 3.37 53.50 0.060 18.02 0.34 - 58.30 11 0.74 160.38 3.04 46.46 0.060 16.99 0.33 - 60.45 12 0.75 151.34 2.81 39.07 0.059 13.84 0.32 - 63.94 13 0.76 142.18 2.58 32.32 0.059 14.91 0.30 - 65.39 14 0.79 135.08 2.37 25.60 0.059 12.56 0.28 - 67.17 15 0.80 128.26 2.21 19.05 0.060 12.24 0.25 - 70.97 16 0.82 120.51 2.05 12.14 0.061 10.92 0.21 - 75.16 17 0.85 116.46 1.88 5.62 0.060 8.30 0.17 - 84.42 18 0.86 110.04 1.73 - 1.49 0.064 5.45 0.13 - 99.08 19 0.88 104.87 1.57 - 9.16 0.065 3.39 0.10 - 131.69 20 0.89 103.82 1.43 - 14.39 0.066 3.64 0.11 - 175.84 21 0.90 100.91 1.30 - 20.35 0.069 1.83 0.17 160.35 22 0.90 99.40 1.15 - 25.89 0.068 1.36 0.24 149.32 23 0.90 100.87 1.04 - 30.07 0.067 - 0.48 0.31 142.60 24 0.90 98.38 0.93 - 34.99 0.066 - 1.84 0.39 139.62 25 0.92 99.27 0.83 - 38.62 0.068 - 0.48 0.45 137.44 26 0.92 101.85 0.76 - 40.47 0.064 4.76 0.49 137.87 note: s - parameters include bond wires. reference planes are at edge of substrates shown on wire bonding information figure below. www.berex.com berex, inc. 3350 scot blvd. #61 - 01 santa clara, ca 95054 tel. (408) 452 - 5595 january 2015 specifications are subject to change without notice. ? berex 2015 rev. 1.7
bcp03 0t wire bonding information follow the wire bonding diagrams recommended by berex below to achieve optimum device performance. berex recommends thermo - compression wedge bonding. as a general rule, bonding temperature should be kept to a maximum of 280c for no longer than 2 minutes for all bo nding wires. ultrasonic bonding is not recommended. using 1 mil . diameter, au bonding wires. 1. gate to input transmission line - length and height : 600 m x 250 m - number of wire (s) : 1 2. drain to output transmission line - length and height : 400 m x 250 m - number of wire(s) : 1 3. source to ground plate - length and height : 250 m x 300 m - number of wire(s) : 4 die attach recommendations : berex recommends the e utectic die attach using au - sn (80% - 20%) pre - forms. the die attach station must have accurate temperature control, and the operation should be performed with parts no hotter than 300c for less than 10 seconds. a n inert forming gas (90% n 2 - 10% h 2 ) or clean, dry n 2 should be used. use of conductive epoxy (gold or silver filled) may also be acceptable for die - attaching low power devices. handling precautions : gaas fets are very sensitive to and may be damaged by electrostatic discharge (esd). therefore, proper esd precautions must be taken whenever you are handling these devices. it is critically important that all work surfaces, and assembly equipment, as well as the operator be properly grounded when handling these devices to prevent esd damage. storage & shipping : berexs standard chip device shipping package consists of an antistatic gel - pak, holding the chips, placed inside a sealed antistatic and moisture barrier bag. this packaging is designed to pro vide a reasonable measure of protection from both mechanical and esd damage. chip devices should be stored in a clean, dry nitrogen gas environment at room temperature until they are required for assembly. only open the shipping package or perform die as sembly in a work area with a class 10,000 or better clean room environment to prevent contamination of the exposed devices. www.berex.com berex, inc. 3350 scot blvd. #61 - 01 santa clara, ca 95054 tel. (408) 452 - 5595 january 2015 specifications are subject to change without notice. ? berex 2015 rev. 1.7
bcp03 0t caution : this product contain s gallium arsenide ( gaas ) which can be hazar dous to the human bo dy and the environment. therefore, it must b e handled with care and in accordance wi th all governmental and company regulati ons for the safe han dling and disposal o f hazardous waste. do not burn, destroy, cut, crush or chemically dissol ve the product. do not lick the product or in any way allow it to enter th e mouth. exclude th e product from gener al industrial waste or garbage and dispose of only in a ccordance to applica ble laws and/or ordi nances disclaimer berex reserves the right to mae changes without further notice to any products herein to improve reliability, function or design. berex does not assume any liability arising out of the application or use of any product or circuit described herein. life support policy berex products are not authorized for use as critica l components in life support devices without the express written approval of berex. 1. life support devices or systems are devices or systems which (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to p erform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perfor m can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. for complete specifications, s - parameters and information on bonding and handling, visited our website; www.berex.com 3. www.berex.com berex, inc. 3350 scot blvd. #61 - 01 santa clara, ca 95054 tel. (408) 452 - 5595 january 2015 specifications are subject to change without notice. ? berex 2015 rev. 1.7
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